TM100SZ-M中文资料

元器件交易网www.cecb2b.com
MITSUBISHI THYRISTOR MODULES

TM100SZ-M
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE

TM100SZ-M

? IT (AV) ? VRRM

Average on-state current .......... 100A Repetitive peak reverse voltage ................ 400V ? VDRM Repetitive peak off-state voltage ................ 400V ? TRIPLE ARMS ? Non-Insulated Type

APPLICATION Welders

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

93.5 80±0.2 K3 K2 K1 2–φ6.5

K2 G2

12.5

K3

K2 K2 G2 CR3 CR2

K1 K1 G1 CR1

26

G3

K1 G1

K3

K3 G3 3–M5

17.5

20

20

Tab#110, t=0.5 K3 K2 K1

A

9
A

21

LABEL

6.5

30

Feb.1999

元器件交易网www.cecb2b.com
MITSUBISHI THYRISTOR MODULES

TM100SZ-M
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS
Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class M 400 480 320 400 480 320 Unit V V V V V V

Symbol IT (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg

Parameter RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Main terminal screw M5

Conditions

Ratings 155

Unit A A A A2s A/?s W W V V A °C °C N·m kg·cm N·m kg·cm g

Three-phase, half-wave, TC=122°C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=1.0A, Tj=150°C

100 2000 1.7 × 104 50 5.0 0.5 10 5.0 2.0 –40~+150 –40~+125 1.47~1.96 15~20 1.96~2.94 20~30 160



Mounting torque Mounting screw M6



Weight

Typical value

ELECTRICAL CHARACTERISTICS
Limits Symbol IRRM IDRM VTM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Tj=150°C, VRRM applied Tj=150°C, VDRM applied Tj=150°C, ITM=300A, instantaneous meas. Tj=150°C, VD=2/3VDRM Tj=25°C, VD=6V, RL=2? Tj=150°C, VD=1/2VDRM Tj=25°C, VD=6V, RL=2? Junction to case (per 1/3 module) Case to fin, conductive grease applied (per 1/3 module) Test conditions Min. — — — 200 — 0.25 15 — — Typ. — — — — — — — — — Max. 30 30 1.15 — 3.0 — 100 0.2 0.3 Unit mA mA V V/?s V V mA °C/ W °C/ W

Feb.1999

元器件交易网www.cecb2b.com
MITSUBISHI THYRISTOR MODULES

TM100SZ-M
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE

PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
10 4 7 Tj=150°C 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 0.6 2000

RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT

SURGE (NON-REPETITIVE) ON-STATE CURRENT (A)

ON-STATE CURRENT (A)

1600

1200

800

400

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0

1

2 3

5 7 10

20 30

50 70100

ON-STATE VOLTAGE

(V)

CONDUCTION TIME (CYCLE AT 60Hz) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 0.200 TRANSIENT THERMAL IMPEDANCE (°C/W)
0.175 0.150 0.125 0.100 0.075 0.050 0.025 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0

GATE CHARACTERISTICS
4 3 2

VFGM=10V

10 1 PGM=5W 7 5 VGT=3.0V PFG(AV)= 3 0.50W 2 IGT= 10 0 100mA 7 5 Tj=25°C 3 2 VGD=0.25V 10 –1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4

GATE VOLTAGE

(V)

GATE CURRENT (mA)

IFGM=2.0A

TIME (s)

100

MAXIMUM AVERAGE ON-STAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) 120° 180° 90° (°C)
60°

LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) 150 PER SINGLE ELEMENT
140 θ 360° RESISTIVE, INDUCTIVE LOAD θ=30°

AVERAGE ON-STATE POWER DISSIPATION (W)

80

60

CASE TEMPERATURE

θ=30° θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 60 80 100

130

40

120

60°

90° 120° 180°

20

110

0

0

20

40

100

0

20

40

60

80

100

AVERAGE ON-STATE CURRENT (A)

AVERAGE ON-STATE CURRENT (A)

Feb.1999

元器件交易网www.cecb2b.com
MITSUBISHI THYRISTOR MODULES

TM100SZ-M
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE

160
AVERAGE ON-STATE POWER DISSIPATION (W)

(°C)

140 120

MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) DC 270°

150

LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE)

PER SINGLE ELEMENT θ 360° RESISTIVE, INDUCTIVE LOAD

180° 120° 90° 60° θ=30° θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 80 100 120 140 160
(A)

140

100 80 60 40 20 0 0 20 40

CASE TEMPERATURE

130

120 θ=30° 60° 90° 180° 270° DC 120°

110

60

100

0

40

80

120

160

AVERAGE ON-STATE CURRENT

AVERAGE ON-STATE CURRENT (A)

Feb.1999


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